Produktnummer:
18d08e8ae5d2b34946a3d064f105711273
| Themengebiete: | DRAM Generator LSI SRAM Signal analog circuit circuit design high voltage integrated circuit |
|---|---|
| Veröffentlichungsdatum: | 22.08.2007 |
| EAN: | 9780387333984 |
| Sprache: | Englisch |
| Seitenzahl: | 346 |
| Produktart: | Gebunden |
| Herausgeber: | Horiguchi, Masashi Itoh, Kiyoo Tanaka, Hitoshi |
| Verlag: | Springer US |
Produktinformationen "Ultra-Low Voltage Nano-Scale Memories"
The goal of Ultra-Low Voltage Nano-Scale Memories is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve the problems with internal power-supply managements are widely and deeply discussed.A lot of knowledge that authors have acquired to date, and circuits the authors regard as important are covered from the basics to the state-of-the-art. Thus, the book is beneficial to students and engineers interested in ultra-low voltage nano-scale LSIs.
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