Haben Sie Fragen? Einfach anrufen, wir helfen gerne: Tel. 089/210233-0
oder besuchen Sie unser Ladengeschäft in der Pacellistraße 5 (Maxburg) 80333 München
+++ Versandkostenfreie Lieferung innerhalb Deutschlands
Haben Sie Fragen? Tel. 089/210233-0

Silicon Carbide

195,00 €*

Sofort verfügbar, Lieferzeit: 1-3 Tage

Produktnummer: 184587994ed5324ea5b435645c9fbb0ae0
Themengebiete: Electrical & Electronics Engineering Electronic Materials Elektronische Materialien Elektrotechnik u. Elektronik Halbleiter Halbleiterphysik Physics Physik Semiconductor Physics Semiconductors
Veröffentlichungsdatum: 21.10.2009
EAN: 9783527409976
Auflage: 1
Sprache: Englisch
Seitenzahl: 520
Produktart: Gebunden
Herausgeber: Friedrichs, Peter Kimoto, Tsunenobu Ley, Lothar Pensl, Gerhard
Verlag: Wiley-VCH
Untertitel: Two Volume Set / Volume 2: Power Devices and Sensors
Produktinformationen "Silicon Carbide"
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.

Sie möchten lieber vor Ort einkaufen?

Sie haben Fragen zu diesem oder anderen Produkten oder möchten einfach gerne analog im Laden stöbern? Wir sind gerne für Sie da und beraten Sie auch telefonisch.

Juristische Fachbuchhandlung
Georg Blendl

Parcellistraße 5 (Maxburg)
8033 München

Montag - Freitag: 8:15 -18 Uhr
Samstags geschlossen