Nanoscale Redox Reaction at Metal/Oxide Interface
Produktnummer:
18a1991dd4945d46e99adb24b1d7ffc2c1
| Autor: | Nagata, Takahiro |
|---|---|
| Themengebiete: | Combinatorial Synthesis Metal/oxide Interface Plasma Surface Treatment Resistive Random Access Memory Schottky Contact Surface Electron Accumulation Layer X-ray Photoelectron Spectroscopy X-ray Reflectometry |
| Veröffentlichungsdatum: | 22.05.2020 |
| EAN: | 9784431548492 |
| Sprache: | Englisch |
| Seitenzahl: | 89 |
| Produktart: | Kartoniert / Broschiert |
| Verlag: | Springer Tokyo |
| Untertitel: | A Case Study on Schottky Contact and ReRAM |
Produktinformationen "Nanoscale Redox Reaction at Metal/Oxide Interface"
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques. The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
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