Field-effect Self-mixing Terahertz Detectors
Produktnummer:
18f8afc9e5b9ad43e29b2ef1aaecb5813f
| Autor: | Sun, Jiandong |
|---|---|
| Themengebiete: | Finite-Difference Time-Domain (FDTD) GaN/AlGaN Heterostructure High-Electron-Mobility Transistor (HEMT) Self-Mixing THz Near-Field Optics Terahertz Antenna Terahertz Detector Two-Dimensional Electron System (2DES) Two-Dimensional Plasma Wave |
| Veröffentlichungsdatum: | 01.02.2016 |
| EAN: | 9783662486795 |
| Sprache: | Englisch |
| Seitenzahl: | 126 |
| Produktart: | Gebunden |
| Verlag: | Springer Berlin |
Produktinformationen "Field-effect Self-mixing Terahertz Detectors"
A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques anddevice simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
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