Charge and Spin Transport in Disordered Graphene-Based Materials
Produktnummer:
183dc097c74b8f4e1b823c70039f1881a6
| Autor: | Van Tuan, Dinh |
|---|---|
| Themengebiete: | Amorphous graphene membranes Anderson localization Charge mobility in disordered graphene Graphene transistors simulation Kubo-greenwood conductivity Order N computational methods Quantum spin Hall effect Quantum transport in graphene Spin Hall effect Spin dynamics and relaxation mechanism |
| Veröffentlichungsdatum: | 04.11.2015 |
| EAN: | 9783319255699 |
| Sprache: | Englisch |
| Seitenzahl: | 153 |
| Produktart: | Gebunden |
| Verlag: | Springer International Publishing |
Produktinformationen "Charge and Spin Transport in Disordered Graphene-Based Materials"
This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.
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