Produktnummer:
18d26bfdaa013d48f784118cbb00ad33b2
| Themengebiete: | SiGe band structure crystal development diodes electron electronic material hydrogen laser material |
|---|---|
| Veröffentlichungsdatum: | 09.02.2012 |
| EAN: | 9783642848063 |
| Sprache: | Englisch |
| Seitenzahl: | 432 |
| Produktart: | Kartoniert / Broschiert |
| Herausgeber: | Harris, Gary L. Rahman, M.Mahmudur Yang, Cary Y. |
| Verlag: | Springer Berlin |
| Untertitel: | Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991 |
Produktinformationen "Amorphous and Crystalline Silicon Carbide IV"
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
Sie möchten lieber vor Ort einkaufen?
Sie haben Fragen zu diesem oder anderen Produkten oder möchten einfach gerne analog im Laden stöbern? Wir sind gerne für Sie da und beraten Sie auch telefonisch.
Juristische Fachbuchhandlung
Georg Blendl
Parcellistraße 5 (Maxburg)
8033 München
Montag - Freitag: 8:15 -18 Uhr
Samstags geschlossen